Электронная библиотека (репозиторий) Томского государственного университета
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Temperature spectra of conductance of Ge/ Si p-i-n structures with Ge quantum dots 2883 3050 220
Electro-physical characteristics of a HgCdTe epitaxial films upon exposure by a volume discharge in air at atmospheric pressure 2244 2438 220
Investigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods 1004 1273 306
Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition 4828 5049 269
Elongated quantum dots of Ge on Si growth kinetics modeling with respect to the additional energy of edges 1140 1315 188
Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots 1720 1932 237
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Pishchagin, Anton A.

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Pishchagin, Anton A.

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